
JOINT PARTICLE SEMINAR
Date: Monday, 28
June 2004
Time:
3:00 p.m.
Place: 4135 Frederick Reines Hall
Speaker: Mario
Bondioli, INFN/Pisa University
Title: The BJT
on high resistivity silicon: a possible tracking device for future
B-factories.
Abstract: Present
experiments in high-energy physics provide confirmations of Standard
Model predictions to an unprecedented level of detail. The success of
present B-factories suggests that these high luminosity, low energy
machines and detectors, with their ability to measure interfering B
decay phases in a clean e+e - environment, may be crucial not only to
establish SM successes but also to find hints of new physics. After a
short presentation of physics goals of next generation B-factory
experiments, expected to witness an increase of luminosity by at least
an order of magnitude, I will discuss the design requirements of the
tracking apparatus and some viable strategies to face the higher event
rate and radiation burden. Then I will focus on the results of an RD
project of a silicon sensor of novel design that can internally amplify
the charge released from visible light, X-rays and charged particles.
This kind of sensor could become a candidate as a pixel element of a
silicon inner vertex detector.
Host: D. Kirkby